It has been announced by Samsung that they have begun manufacturing the first three dimensional NAND flash memory in the industry. The result of this new tech means that there should  be an increase in both performance and reliability by a significant amount with “twice the write performance over conventional 10nm-class floating gate NAND flash memory” and “an increase of a minimum of 2X to a maximum 10X higher reliability.”
They said “Samsung’s new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company’s proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung’s 3D V-NAND is able to provide over twice the scaling of 20nm-class* planar NAND flash.” What this basically means is that with this new technology they will be able to make significantly larger storage devices in the same space requirements, as well as making them faster and more reliable.
“The new 3D V-NAND flash technology is the result of our employees’ years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology,” said Jeong-Hyuk Choi, (he’s the senior vice president for flash products & technology at Samsung ) “Following the world’s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry.”
